演讲嘉宾-Joshua Robinson

Joshua Robinson
宾夕法尼亚州立大学 助理教授

Joshua Robinson,宾夕法尼亚州立大学材料科学与工程系助理教授

Robinson博士于2001年在美国陶森大学获得了物理学学士学位,并辅修了化学和数学。2005年获得宾夕法尼亚州立大学的材料科学与工程学博士学位后,进入华盛顿美国海军研究实验室从事博士后研究,并开发了用于检测爆炸物和神经性毒剂的高碳纳米管器件。2007年,Robinson博士加入宾夕法尼亚州立大学电子光学中心担任研究助理;2012年,他成为材料科学与工程系的助理教授。他是超过50篇同行评议期刊的作者或和合著者,涉及石墨烯、碳化硅、复合氧化物,碳纳米管和锑化镓领域,并拥有两项化学和中子探测的专利。2012年获得Rustom and Della Roy材料创新奖,2007年获得Alan Berman Research Publication 奖,2005年获得国家研究委员会博士后奖学金。

演讲题目:Utilization of Epitaxial Graphene as a Template for Advanced van der Waals Heterostructures
主题会场
开始时间
结束时间
内容摘要

Nearly a decade ago, the research community was presented with a unique opportunity to explore a new material system known as graphene. Graphene exhibited phenomenal electronic, chemical, and structural properties that constitutes a new paradigm in materials exploration in which atomic layer control is possible, and even though graphene is considered transformational, it is only the “tip of the iceberg.” Synthesizing and heterogeneously combining atomic layered transition metal dichalcogenides to form van der Waals (vdW) solids, where each layer may be different from the previous, is a powerful way to develop novel nanoscale materials. Furthermore, having the ability to tune the physics and chemistry with atomic-level precision is the foundation for “properties-on-demand”, which can have an enormous impact on current and future technologies.  This talk will elaborate on recent breakthroughs for direct growth of two-dimensional atomic layers on a graphene template, and provide evidence that graphene can be an ideal substrate for building van der Waals solids. We have demonstrated the direct growth of MoS2, WSe2, and hBN on epitaxial graphene to form large area van der Waals heterostructures. We reveal that the properties of the underlying graphene dictate properties of the heterostructures, where strain, wrinkling, and defects on the surface of graphene act as nucleation centers for lateral growth of the overlayer. Additionally, we demonstrate that the direct synthesis of TMDs on epitaxial graphene exhibits atomically sharp interfaces. Finally we demonstrate that the direct growth of MoS2 on epitaxial graphene can lead to a 103 improvement in photo response compared to MoS2 alone.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

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凯发_Joshua Robinson

凯发

演讲嘉宾-Joshua Robinson

Joshua Robinson
宾夕法尼亚州立大学 助理教授

Joshua Robinson,宾夕法尼亚州立大学材料科学与工程系助理教授

Robinson博士于2001年在美国陶森大学获得了物理学学士学位,并辅修了化学和数学。2005年获得宾夕法尼亚州立大学的材料科学与工程学博士学位后,进入华盛顿美国海军研究实验室从事博士后研究,并开发了用于检测爆炸物和神经性毒剂的高碳纳米管器件。2007年,Robinson博士加入宾夕法尼亚州立大学电子光学中心担任研究助理;2012年,他成为材料科学与工程系的助理教授。他是超过50篇同行评议期刊的作者或和合著者,涉及石墨烯、碳化硅、复合氧化物,碳纳米管和锑化镓领域,并拥有两项化学和中子探测的专利。2012年获得Rustom and Della Roy材料创新奖,2007年获得Alan Berman Research Publication 奖,2005年获得国家研究委员会博士后奖学金。

演讲题目:Utilization of Epitaxial Graphene as a Template for Advanced van der Waals Heterostructures
主题会场
开始时间
结束时间
内容摘要

Nearly a decade ago, the research community was presented with a unique opportunity to explore a new material system known as graphene. Graphene exhibited phenomenal electronic, chemical, and structural properties that constitutes a new paradigm in materials exploration in which atomic layer control is possible, and even though graphene is considered transformational, it is only the “tip of the iceberg.” Synthesizing and heterogeneously combining atomic layered transition metal dichalcogenides to form van der Waals (vdW) solids, where each layer may be different from the previous, is a powerful way to develop novel nanoscale materials. Furthermore, having the ability to tune the physics and chemistry with atomic-level precision is the foundation for “properties-on-demand”, which can have an enormous impact on current and future technologies.  This talk will elaborate on recent breakthroughs for direct growth of two-dimensional atomic layers on a graphene template, and provide evidence that graphene can be an ideal substrate for building van der Waals solids. We have demonstrated the direct growth of MoS2, WSe2, and hBN on epitaxial graphene to form large area van der Waals heterostructures. We reveal that the properties of the underlying graphene dictate properties of the heterostructures, where strain, wrinkling, and defects on the surface of graphene act as nucleation centers for lateral growth of the overlayer. Additionally, we demonstrate that the direct synthesis of TMDs on epitaxial graphene exhibits atomically sharp interfaces. Finally we demonstrate that the direct growth of MoS2 on epitaxial graphene can lead to a 103 improvement in photo response compared to MoS2 alone.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: