Hydrogen etching properties of graphene domains and films grown on copper (Cu) foil via chemical vapor deposition and were studied. Numerous trenches were observed on the initial graphene domains after etching, and the trench patterns were closely associated with the Cu crystal orientation. The distribution of trenches is also related with the Cu surface reconstruction observed after cooling down to RT, and the winkles density can be reduced by increasing the coverage of Cu reconstruction areas.  No trenches were found if the etching process was conducted before cooling down. The etching trenches were bound up with the wrinkles formed during the cooling down process. Hydrogen etching provides a convenient way to detect the distribution and morphology of wrinkles in graphene.

Hydrogen etching properties of graphene domains and films grown on copper (Cu) foil via chemical vapor deposition and were studied. Numerous trenches were observed on the initial graphene domains after etching, and the trench patterns were closely associated with the Cu crystal orientation. The distribution of trenches is also related with the Cu surface reconstruction observed after cooling down to RT, and the winkles density can be reduced by increasing the coverage of Cu reconstruction areas.  No trenches were found if the etching process was conducted before cooling down. The etching trenches were bound up with the wrinkles formed during the cooling down process. Hydrogen etching provides a convenient way to detect the distribution and morphology of wrinkles in graphene.