Marco Lisker - 石墨烯大会

演讲嘉宾-Marco Lisker

Marco Lisker

Dr. Marco Lisker received the diploma in physics and the Ph.D. degree from the Otto-von-Guericke University, Magdeburg, Germany, in 1997 and 2001, respectively. For his PHD thesis he worked on UV detectors based on wide band gap materials (e.g. GaN). From 2000–2009 he was with the Department of Electrical Engineering at the University of Magdeburg. Here he worked on MOCVD processes for ferroelectric materials and noble metal electrodes. Since 2009 he has been a process engineer and a member of the research staff of Innovations for High-performance Microelectronics (IHP), Frankfurt/Oder. Since 2011 he is the project leader for hetero integration projects – collaboration with the Ferdinand-Braun-Institute Berlin. Herein the monolithic integration of SiGe circuit building blocks with InP sub-circuits is realized by BCB based wafer bonding for mm wave applications. Since 2016 he is the project leader of graphene integration into the BiCMOS technology in the clean room of the IHP. Dr. Lisker has authored and co-authored more than 80 papers in journals and conferences.

演讲题目：Large Scale Graphene Integration in a 200 mm Wafer Silicon Technology

主题会场石墨烯战略前沿

开始时间2017-09-25 09:30:00

结束时间2017-09-25 10:00:00

内容摘要

The commercialization of graphene in electronic and optoelectronic applications can greatly benefit from the compatibility of graphene-based device fabrication with Si integrated circuit manufacturing platforms. Regardless of recent progress, procedures used for the fabrication of graphene devices still lack the stability and compatibility with Si-technology processes which could enable access to the large scale semiconductor industry infrastructure. From this point of view, it is of greatest importance to investigate preparation of graphene devices in conditions resembling as close as possible the Si technology environment. In this work we present process developments for the integration of graphene into a 200mm silicon technology platform. We investigated different process module developments like graphene synthesis on silicon compatible materials like germanium and a non-destructive deposition of dielectric materials on the 2D graphene sheet. Moreover, the combinations of these processes for various concepts of contacting on a full 200 mm wafer are considered.