Graphene, the atomic thin carbon film with honeycomb lattice, holds great promise in a wide range of applications, arising from its unique band structure and excellent electronic and mechanical properties. The research of this star material is being stimulated by the development of various emerging synthesis techniques. We have been working on the controlled CVD growth of high-quality graphene and its 2D hybrids targeting electronic devices since 2008. By designing the growth catalysts and elementary steps of CVD processes, we have succeeded in controlling the layer thickness, stacking order, domain size, doping and energy band structures of graphene. The representative works include the bimetal alloy catalyst, group IV to VI transition metal carbide catalysts, van der Waals epitaxial growth of bilayer graphene, segregation growth using solid carbons, wrinkle engineering, mosaic graphene, etc. We also work on the CVD growth of high-quality graphene on insulating substrates. We have successfully synthesized monolayer graphene on high-k SrTiO3 and the on-site field effect transistors showed excellent electronic performances. Particular focus was laid on the controlled growth on hexagonal boron nitride (h-BN), a perfect dielectric substrate demonstrating the extremely high carrier mobility of graphene. We developed a temperature-triggered chemical switching technique and a co-segregation technique and realized a wafer-scale epitaxial growth of high quality graphene on h-BN monolayers. A direct growth of graphene on glass is of great challenge and importance. We have made a breakthrough along this direction. These super graphene glasses inherited the wonderful performances of both graphene and glass, demonstrating their great potentials in various daily-life applications. 

Graphene, the atomic thin carbon film with honeycomb lattice, holds great promise in a wide range of applications, arising from its unique band structure and excellent electronic and mechanical properties. The research of this star material is being stimulated by the development of various emerging synthesis techniques. We have been working on the controlled CVD growth of high-quality graphene and its 2D hybrids targeting electronic devices since 2008. By designing the growth catalysts and elementary steps of CVD processes, we have succeeded in controlling the layer thickness, stacking order, domain size, doping and energy band structures of graphene. The representative works include the bimetal alloy catalyst, group IV to VI transition metal carbide catalysts, van der Waals epitaxial growth of bilayer graphene, segregation growth using solid carbons, wrinkle engineering, mosaic graphene, etc. We also work on the CVD growth of high-quality graphene on insulating substrates. We have successfully synthesized monolayer graphene on high-k SrTiO3 and the on-site field effect transistors showed excellent electronic performances. Particular focus was laid on the controlled growth on hexagonal boron nitride (h-BN), a perfect dielectric substrate demonstrating the extremely high carrier mobility of graphene. We developed a temperature-triggered chemical switching technique and a co-segregation technique and realized a wafer-scale epitaxial growth of high quality graphene on h-BN monolayers. A direct growth of graphene on glass is of great challenge and importance. We have made a breakthrough along this direction. These super graphene glasses inherited the wonderful performances of both graphene and glass, demonstrating their great potentials in various daily-life applications.