The progress on flexible active nanoelectronics based on 2D materials including graphene, TMDs and phosphorene will be presented. Over the past decade, it has become clear that 2D materials are ideal for flexible electronics owing to their optimum electrostatics, maximum transparency and high mechanical compliance available in thin-film transistors (TFTs). Here, we report on the state of the art 2D RF TFTs on flexible polymeric, rubber and glass substrates. We realize large-area monolayer MoS2 on plastics with 5.6GHz cutoff frequency, a record value for flexible TMDs. For higher frequency devices, flex black phosphorus (BP) RF TFT is demonstrated for the first time with fT ~17.5GHz. In addition, for sub-THz nanosystems, we have achieved record 100GHz graphene TFTs on bendable glass, 56% higher than on PI or PET, largely due to the higher thermal conductivity of glass. Considering bandgaps, our RF results indicates that for flexible nanoelectronics, MoS2 is suitable for low-power RF & high-speed digital, BP is ideal for high-speed analog & RF, and graphene can enable sub-THz analog TFTs.

The progress on flexible active nanoelectronics based on 2D materials including graphene, TMDs and phosphorene will be presented. Over the past decade, it has become clear that 2D materials are ideal for flexible electronics owing to their optimum electrostatics, maximum transparency and high mechanical compliance available in thin-film transistors (TFTs). Here, we report on the state of the art 2D RF TFTs on flexible polymeric, rubber and glass substrates. We realize large-area monolayer MoS2 on plastics with 5.6GHz cutoff frequency, a record value for flexible TMDs. For higher frequency devices, flex black phosphorus (BP) RF TFT is demonstrated for the first time with fT ~17.5GHz. In addition, for sub-THz nanosystems, we have achieved record 100GHz graphene TFTs on bendable glass, 56% higher than on PI or PET, largely due to the higher thermal conductivity of glass. Considering bandgaps, our RF results indicates that for flexible nanoelectronics, MoS2 is suitable for low-power RF & high-speed digital, BP is ideal for high-speed analog & RF, and graphene can enable sub-THz analog TFTs.